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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION *With TO-220 package *Complement to type 2SC2516/2516A *Low collector saturation voltage APPLICATIONS *Switching regulators *DC-DC converters *High-frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO PARAMETER Collector-base voltage 2SA1069 VCEO Collector-emitter voltage 2SA1069A VEBO IC ICM IB B CONDITIONS Open emitter VALUE -80 -60 UNIT V Open base -80 Open collector -12 -5 -10 -2.5 Ta=25 1.5 V Emitter-base voltage Collector current Collector current-Peak Base current V A A A PC Collector power dissipation TC=25 30 150 -55~150 W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SA1069 VCEO(SUS) Collector-emitter sustaining voltage 2SA1069A VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SA1069 ICBO Collector cut-off current 2SA1069A IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-5V IC=-3A ; VCE=-5V IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-60V; IE=0 IC=-3.0A ,IB=-0.3A;L=1mH CONDITIONS 2SA1069 2SA1069A MIN -60 TYP. MAX UNIT V -80 -0.6 -1.5 V V -10 A -10 40 40 200 A Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A ; VCC=-50V IB1=-IB2=-0.3A;RL=17 0.5 2.5 0.5 s s s hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1069 2SA1069A Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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